Igbt Gate Driver Design

Igbt gate driver reference design for parallel igbts with short circuit protection and external bjt buffer 1 4 highlighted products the tida 00917 reference design features the following device from texas instruments.

Igbt gate driver design.

The igbts inside the module are configured in half bridge configurations. Select the right silicon carbide or igbt gate driver for your next energy efficient robust and compact system design high efficiency boost the efficiency of your design with strong drive currents high cmti and short propagation delays of our sic and igbt gate drivers. Gate charge required qg. The output of the driver must be able to provide the gate charge needed to charge and discharge the igbt gate.

Lets look at an example. Each half bridge is driven by two igbt gate drivers top high side and bottom low side. Design uses three reinforced isolated dual igbt gate drivers ucc21520 to drive six igbts. These gate charge dynamic input characteristics show the electric load necessary to.

A necessary companion for discrete power mosfets and igbts as well as digital microcontrollers dsps and fpgs or analog controllers in any switched mode power converter stdrive gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial consumer computer and automotive applications. Sil dil igbt non mountable unit type igbt driver non built in power supply type igbt driver product tree built in power supply type hybrid ic type igbt mountable unit type. Separate positive and negative gate driver outputs allow optimization of igbt turn on off time without an external diode by selecting serial gate resistors of different values. The igbts are integrated into a module along with a temperature sensor ntc.

1 4 1 iso5852s the iso5852s is a 5 7 kvrms reinforced isolated igbt gate driver with split outputs outh and outl. Since an igbt has a mos gate structure to charge and discharge this gate when switching it is necessary to make gate current drive current flow. As far as driving igbt is concerned it resembles a mos fet and hence all turn on and turn off phenomena com ments diagrams and driver circuits designed for driving mosfet apply equally well to an igbt. Therefore what follows deals only with mosfet models.

Within semikron driver data the maximum gate charge per pulse is given and needs to be considered when choosing the driver. N co cn cp cgd gate electrode source metalization p base rb n drift cdb depletion. It is an informative collection of. Three phase pwm dc ac converter switching frequency 10khz gate voltage 8 15v igbt module selected is a 1200v 150a halfbridge 2 channel with a 7ω gate resistor we need to know the following.

Fig 7 3 shows the gate charge dynamic input characteristics.